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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices an

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Specificaties

Objectstaat
Nieuw: Een nieuw, ongelezen en ongebruikt boek in perfecte staat waarin geen bladzijden ontbreken of ...
ISBN-13
9781118313527
Book Title
Fundamentals of Silicon Carbide Technology
ISBN
9781118313527
Publication Year
2014
Type
Textbook
Format
Hardcover
Subject Area
Mechanical Engineering
Language
English
Publication Name
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Item Height
261mm
Author
James A. Cooper, Tsunenobu Kimoto
Publisher
John Wiley & Sons INC International Concepts
Item Width
179mm
Item Weight
1182g
Number of Pages
552 Pages

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Product Information

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Product Identifiers

Publisher
John Wiley & Sons INC International Concepts
ISBN-13
9781118313527
eBay Product ID (ePID)
209450569

Product Key Features

Subject Area
Mechanical Engineering
Author
James A. Cooper, Tsunenobu Kimoto
Publication Name
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Format
Hardcover
Language
English
Publication Year
2014
Type
Textbook
Number of Pages
552 Pages

Dimensions

Item Height
261mm
Item Width
179mm
Item Weight
1182g

Additional Product Features

Title_Author
James A. Cooper, Tsunenobu Kimoto
Series Title
Wiley-Ieee
Country/Region of Manufacture
United States

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Informatie van zakelijke verkoper

ABC Books Ltd
Unit 2D
Gatwick Gate Industrial Estate
Crawley, Lowfield Heath
London
RH11 0TG
United Kingdom
Btw-nummer:
  • GB 324767388
Handelsregistratienummer:
  • 05034144
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